Intrinsic Nonlinear Planar Hall Effect

Abstract

We propose an intrinsic nonlinear planar Hall effect, which is of band geometric origin, independent of scattering, and scales with the second order of electric field and first order of magnetic field. We show that this effect is less symmetry constrained compared to other nonlinear transport effects and is supported in a large class of nonmagnetic polar and chiral crystals. Its characteristic angular dependence provides an effective way to control the nonlinear output. Combined with first-principles calculations, we evaluate this effect in the Janus monolayer MoSSe and report experimentally measurable results. Our work reveals an intrinsic transport effect, which offers a new tool for material characterization and a new mechanism for nonlinear device application.

6 pages, 3 figures

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• Engineering the in-plane anomalous Hall effect in Cd${}_3$As${}_2$ thin films
• Group Theory on Quasisymmetry and Protected Near Degeneracy
• Planar Hall Plateau in Magnetic Weyl Semimetals
• Symmetry Origin and Microscopic Mechanism of Electrical Magnetochiral Anisotropy in Tellurium
• Orbital origin of fourfold anisotropic magnetoresistance in Dirac materials
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• Intrinsic Orbital Origin for the Chirality-Dependent Nonlinear Planar Hall Effect of Topological Nodal Fermions in Chiral Crystals
• Layer Coherence Origin of Planar Hall Effect: from Charge to Multipole and Valley
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• Magnetic Field Induced Quantum Metric Dipole in Dirac Semimetal Cd3As2
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• Problem of nonlinear conductivity within relaxation time approximation in noncentrosymmetric insulators
• Prediction of a layer nonlinear Hall effect in bilayer nonmagnetic or antiferromagnetic systems
• General solution for the response of materials under radiation and tilted magnetic field: semi-classical regime
• Orbital enhanced intrinsic nonlinear planar Hall effect for probing topological phase transition in CuTlSe${}_2$