Dependence of Effective Mass on Spin and Valley Degrees of Freedom

Abstract

We measure the effective mass (m*) of interacting two-dimensional electrons confined to an AlAs quantum well while we change the conduction-band valley occupation and the spin polarization via the application of strain and magnetic field, respectively. Compared to its band value, m* is enhanced unless the electrons are fully valley and spin polarized. Incidentally, in the fully spin- and valley-polarized regime, the electron system exhibits an insulating behavior.

4 pages, 4 figures

References in corpus (5)

• Valley susceptibility of an interacting two-dimensional electron system
• Measurements of the density-dependent many-body electron mass in 2D GaAs/AlGaAs Heterostructures
• Spin-independent origin of the strongly enhanced effective mass in a dilute 2D electron system
• Effective mass suppression in dilute, spin-polarized two-dimensional electron systems
• Spin Polarization Dependence of Carrier Effective Mass in Semiconductor Structures: Spintronic Effective Mass

Cited by in corpus (7)

• Band mass anisotropy and the intrinsic metric of fractional quantum Hall systems
• Observation of Spontaneous Ferromagnetism in a Two-Dimensional Electron System
• Valley polarization assisted spin polarization in two dimensions
• Contrast between spin and valley degrees of freedom
• $m^{\ast }$ of two-dimensional electron gas: a neural canonical transformation study
• Tuning Fermi Liquids with polaritonic Cavities
• Spin independence of the strongly enhanced effective mass in ultra-clean SiGe/Si/SiGe two-dimensional electron system