Temperature dependent magnetotransport around = 1/2 in ZnO heterostructures
arXiv:1203.3349 · doi:10.1103/PhysRevLett.108.186803
Abstract
The sequence of prominent fractional quantum Hall states up to =5/11 around =1/2 in a high mobility two-dimensional electron system confined at oxide heterointerface (ZnO) is analyzed in terms of the composite fermion model. The temperature dependence of $\Rxx$ oscillations around =1/2 yields an estimation of the composite fermion effective mass, which increases linearly with the magnetic field. This mass is of similar value to an enhanced electron effective mass, which in itself arises from strong electron interaction. The energy gaps of fractional states and the temperature dependence of $\Rxx$ at =1/2 point to large residual interactions between composite fermions.
5 pages, 4 Figures
References in corpus (6)
- Magnetic effects at the interface between nonmagnetic oxides
- Electric Field Control of the LaAlO/SrTiO Interface Ground State
- Measurements of the density-dependent many-body electron mass in 2D GaAs/AlGaAs Heterostructures
- Spin-independent origin of the strongly enhanced effective mass in a dilute 2D electron system
- Spin susceptibility and effective mass of two-dimensional electrons in MgxZn1-xO/ZnO heterostructures
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- Enhanced quantum oscillatory magnetization and non-equilibrium currents in an interacting two-dimensional electron system in MgZnO/ZnO with repulsive scatterers
- Flat bands on spherical surface: from Landau levels to giant-quantum-number orbitals