30 citations · 30 across the 1 of their papers we have counts for
3 papers
Model of tunneling transistors based on graphene on SiC
Paolo Michetti, Martina Cheli, Giuseppe Iannaccone
Recent experiments shown that graphene epitaxially grown on Silicon Carbide (SiC) can exhibit a energy gap of 0.26 eV, making it a promising material for electronics. With an accur…
Model and performance evaluation of field-effect transistors based on epitaxial graphene on SiC
Martina Cheli, Paolo Michetti, Giuseppe Iannaccone
In view of the appreciable semiconducting gap of 0.26 eV observed in recent experiments, epitaxial graphene on a SiC substrate seems a promising channel material for FETs. Indeed,…
A semi-analytical model of Bilayer Graphene Field Effect Transistor
Martina Cheli, Gianluca Fiori, Giuseppe Iannaccone
Bilayer graphene has the very interesting property of an energy gap tunable with the vertical electric field. We propose an analytical model for a bilayer-graphene field-effect tra…