502 citations · 981 across the 7 of their papers we have counts for
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cond-mat.mes-hall2022★ 21 cited
Design Considerations for 2D Dirac-Source FETs: Device Parameters, Non-Idealities and Benchmarking
Peng Wu, Joerg Appenzeller
Dirac-source field-effect transistors (DS-FETs) have been proposed as promising candidates for low-power switching devices by leveraging the Dirac cone of graphene as a low-pass en…
cond-mat.mtrl-sci2022★ 184 cited
How to Report and Benchmark Emerging Field-Effect Transistors
Zhihui Cheng, Chin-Sheng Pang, Peiqi Wang +13
Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device per…
physics.app-ph2022★ 5 cited
A Magnetoelectric Memory Device Based on Pseudo-Magnetization
Tingting Shen, Orchi Hassan, Neil R. Dilley +2
We propose a new type of magnetoelectric memory device that stores magnetic easy-axis information or pseudo-magnetization, rather than a definite magnetization direction, in piezoe…