Making a field effect transistor on a single graphene nanoribbon by selective doping
arXiv:0711.0787 · doi:10.1063/1.2826547
Abstract
Using first-principle electronic structure calculations, we show a metal- semiconductor transition of a metallic graphene nanoribbon with zigzag edges induced by substitutional doping of Nitrogen or Boron atoms at the edges. A field effect transistor consisting of a metal-semiconductor-metal junction can then be constructed by selective doping of the ribbon edges. The current-voltage characteristics of such a prototype device is determined by the first-principle quantum transport calculations.
4 pages, 3 figures. Accepted in APL
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- Spin negative differential resistance in edge doped zigzag graphene nanoribbons
- Towards Graphene Nanoribbon-based Electronics
- Disorder-based graphene spintronics
- Electronic properties of zigzag, armchair and their hybrid quantum dots of graphene and boron-nitride with and without substitution: A DFT study
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- Controlling transport properties of graphene nanoribbons by codoping-induced edge distortions
- The mechanism and process of spontaneous boron doping in graphene in the theoretical perspective
- Conductance recovery and spin polarization in boron and nitrogen codoped graphene nanoribbons