Anomalous Doping Effects on Charge Transport in Graphene Nanoribbons

Abstract

We present first-principles calculations of quantum transport in chemically doped graphene nanoribbons with a width of up to 4 nm. The presence of boron and nitrogen impurities is shown to yield resonant backscattering, whose features are strongly dependent on the symmetry and the width of the ribbon, as well as the position of the dopants. Full suppression of backscattering is obtained on the pi-pi* plateau when the impurity preserves the mirror symmetry of armchair ribbons. Further, an unusual acceptor-donor transition is observed in zig-zag ribbons. These unconventional doping effects could be used to design novel types of switching devices.

Accepted in Physical Review Letters

References in corpus (19)

• Electric Field Effect in Atomically Thin Carbon Films
• The electronic properties of graphene
• Detection of Individual Gas Molecules Absorbed on Graphene
• Energy Band Gap Engineering of Graphene Nanoribbons
• Energy Gaps in Graphene Nanoribbons
• Half-Metallic Graphene Nanoribbons
• Graphene Nano-Ribbon Electronics
• Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors
• A Graphene Field-Effect Device
• Tailoring the atomic structure of graphene nanoribbons by STM lithography
• Structure, Stability, Edge States and Aromaticity of Graphene Ribbons
• Edge-functionalized and substitutional doped graphene nanoribbons: electronic and spin properties
• Electronic transport and quantum Hall effect in bipolar graphene p-n-p junction
• Role of Symmetry in the Transport Properties of Graphene Nanoribbons under Bias
• Edge state on hydrogen-terminated graphite edges investigated by scanning tunneling microscopy
• Charge Transport in Disordered Graphene-Based Low Dimensional Materials
• Top-gated graphene field-effect-transistors formed by decomposition of SiC
• Stabilization mechanism of edge states in graphene
• Making a field effect transistor on a single graphene nanoribbon by selective doping

Cited by in corpus (4)

• Current-voltage (I-V) characteristics of armchair graphene nanoribbons under uniaxial strain
• Chemically-induced Mobility Gaps in Graphene Nanoribbons: A Route for Upscaling Device Performances
• Atomistic Boron-Doped Graphene Field Effect Transistors: A Route towards Unipolar Characteristics
• Effects due to backscattering and pseudogap features in graphene nanoribbons with single vacancies