Chemically-induced Mobility Gaps in Graphene Nanoribbons: A Route for Upscaling Device Performances

Abstract

We report a first-principles based study of mesoscopic quantum transport in chemically doped graphene nanoribbons with a width up to 10 nm. The occurrence of quasibound states related to boron impurities results in mobility gaps as large as 1 eV, driven by strong electron-hole asymmetrical backscattering phenomena. This phenomenon opens new ways to overcome current limitations of graphene-based devices through the fabrication of chemically-doped graphene nanoribbons with sizes within the reach of conventional lithography.

arXiv commentNano Letters (in press)

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Cited by in corpus (14)

• Electronic transport in two dimensional graphene
• Linear Scaling Quantum Transport Methodologies
• Quantum Transport in Chemically-modified Two-Dimensional Graphene: From Minimal Conductivity to Anderson Localization
• Magnetoresistance in Disordered Graphene: The Role of Pseudospin and Dimensionality Effects Unraveled
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• Conductance quantization in graphene nanoconstrictions with mesoscopically smooth but atomically stepped boundaries
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• Robust Dirac Point in Honeycomb Structure Nanoribbons with Zigzag Edges
• Growth, charge and thermal transport of flowered graphene
• Electronic and Quantum Transport Properties of Substitutionally Doped Double-Walled Carbon Nanotubes
• Quantum transport in graphene nanoribbon networks: complexity reduction by a network decimation algorithm