Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET

Abstract

A bilayer graphene based electrostatically doped tunnel field-effect transistor (BED-TFET) is proposed in this work. Unlike graphene nanoribbon TFETs in which the edge states deteriorate the OFF-state performance, BED-TFETs operate based on different bandgaps induced by vertical electric fields in the source, channel, and drain regions without any chemical doping. The performance of the transistor is evaluated by self-consistent quantum transport simulations. This device has several advantages: 1) ultra-low power (VDD=0.1V), 2) high performance (ION/IOFF>104), 3) steep subthreshold swing (SS<10mv/dec), and 4) electrically configurable between N-TFET and P-TFET post fabrication. Here, the operation principle of the BED-TFET and its performance sensitivity to the device design parameters are studied.

4 pages, 6 figures in 2016 Journal of the Electron Device Society

References in corpus (10)

• Energy Band Gap Engineering of Graphene Nanoribbons
• Graphene Nano-Ribbon Electronics
• Simulation of Graphene Nanoribbon Field Effect Transistors
• Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials
• Effect of edge roughness in graphene nanoribbon transistors
• Effect of Edge Roughness on Electronic Transport in Graphene Nanoribbon Channel Metal Oxide Semiconductor Field-Effect Transistors
• Dielectric Engineered Tunnel Field-Effect Transistor
• Scaling Theory of Electrically Doped 2D Transistors
• Can Tunnel Transistors Scale Below 10nm?
• In-surface confinement of topological insulator nanowire surface states

Cited by in corpus (15)

• Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors
• Saving Moore's Law Down To 1nm Channels With Anisotropic Effective Mass
• Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene
• Switching Mechanism and the Scalability of vertical-TFETs
• Can Tunnel Transistors Scale Below 10nm?
• From Fowler-Nordheim to Non-Equilibrium Green's Function Modeling of Tunneling
• Design Rules for High Performance Tunnel Transistors from 2D Materials
• Büttiker probes for dissipative phonon quantum transport in semiconductor nanostructures
• Sensitivity Challenge of Steep Transistors
• Impact of Edge States on Device Performance of Phosphorene Heterojunction Tunneling Field Effect Transistors
• Magnesium-intercalated graphene on SiC: highly n-doped air-stable bilayer graphene at extreme displacement fields
• Transport in vertically stacked hetero-structures from 2D materials
• Dramatic Impact of Dimensionality on the Electrostatics of PN Junctions
• Impact of Dimensionality on PN Junctions
• Hole Mobility Model for Si Double-Gate Junctionless Transistors