activity
20042020
most citedBias voltage controlled magnetization switch in ferromagnetic semiconductor resonant tunneling diodes

18 citations · 54 across the 12 of their papers we have counts for

collaborators

14 papers

eess.SY2020

India's Rise in Nanoelectronics Research

Udayan Ganguly, Sandip Lashkare, Swaroop Ganguly

Modern semiconductors innovation has a strong relation to scale and skill. While India has a significant demand for semiconductors, it has a daunting challenge to create a semicond…

quant-ph2018

Decoherence assisted spin squeezing generation in superposition of tripartite GHZ and W states

Kapil K. Sharma, Swaroop Ganguly

In the present paper, we study spin squeezing under decoherence in the superposition of tripartite maximally entangled GHZ and W states. Here we use amplitude damping, phase dampin…

cond-mat.mes-hall2018★ 6 cited

Electrical-equivalent van der Waals gap for 2D bilayers

Dhirendra Vaidya, Saurabh Lodha, Swaroop Ganguly

Vertical stacks of two-dimensional (2D) materials, separated by the van der Waals gap and held together by the van der Waals forces, are immensely promising for a plethora of nanot…

physics.app-ph2018★ 6 cited

Analytical Modeling of Metal Gate Granularity based Threshold Voltage Variability in NWFET

P Harsha Vardhan, Sushant Mittal, Swaroop Ganguly +1

Estimation of threshold voltage V T variability for NWFETs has been compu- tationally expensive due to lack of analytical models. Variability estimation of NWFET is essential to de…

quant-ph2017

The Avian Compass can be Sensitive even without Sustained Quantum Coherence

Rakshit Jain, Vishvendra Singh Poonia, Kasturi Saha +2

Theoretical studies indicating the presence of long-lived coherence in the radical pair system have engendered questions about the utilitarian role of sustained coherence in the av…

physics.app-ph2017★ 6 cited

Effect of Tensile Strain in GaN Layer on the Band Offsets and 2DEG Density in AlGaN/GaN Heterostructures

Mihir Date, Sudipta Mukherjee, Joydeep Ghosh +3

We have addressed the existing ambiguity regarding the effect of process-induced strain in the underlying GaN layer on AlGaN/GaN heterostructure properties. The bandgaps and offset…