2 papers
cond-mat.mes-hall2005
Intrinsic Curie temperature bistability in ferromagnetic semiconductor resonant tunneling diodes
Swaroop Ganguly, A. H. MacDonald, L. F. Register +1
We predict bistability in the Curie temperature-voltage characteristic of double barrier resonant-tunneling structures with dilute ferromagnetic semiconductor quantum wells. Our co…
cond-mat.mes-hall2004
Bias voltage controlled magnetization switch in ferromagnetic semiconductor resonant tunneling diodes
Swaroop Ganguly, L. F. Register, S. Banerjee +1
We predict that the Curie temperature of a ferromagnetic resonant tunneling diode will decrease abruptly, by approximately a factor of two, when the downstream chemical potential f…