Resonant Tunneling Magneto Resistance in Coupled Quantum Wells

Abstract

A three barrier resonant tunneling structure in which the two quantum wells are formed by a dilute magnetic semiconductor material (ZnMnSe) with a giant Zeeman splitting of the conduction band is theoretically investigated. Self-consistent numerical simulations of the structure predict giant magnetocurrent in the resonant bias regime as well as significant current spin polarization for a considerable range of applied biases.

4 pages, 4 figures

References in corpus (1)

• Theory of ferromagnetic (III,Mn)V semiconductors

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