Electron Spin Polarization in Resonant Interband Tunneling Devices

Abstract

We study spin-dependent interband resonant tunneling in double-barrier InAs/AlSb/ GaMnSb heterostructures. We demonstrate that these structures can be used as spin filters utilizing spin-selective tunneling of electrons through the light-hole resonant channel. High densities of the spin polarized electrons injected into bulk InAs make spin resonant tunneling devices a viable alternative for injecting spins into a semiconductor. Another striking feature of the proposed devices is the possibility of inducing additional resonant channels corresponding to the heavy holes. This can be implemented by saturating the in-plane magnetization in the quantum well.

11 pages, 4 eps figures

References in corpus (5)

• Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem
• Efficient Electrical Spin Injection from a Magnetic Metal / Tunnel Barrier Contact into a Semiconductor
• Spin-polarized Zener tunneling in (Ga,Mn)As
• Above-Room-Temperature Ferromagnetism in GaSb/Mn Digital Alloys
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Cited by in corpus (7)

• Dilute ferromagnetic semiconductors: Physics and spintronic structures
• Semiconductor Spintronics
• A multiband envelope function model for quantum transport in a tunneling diode
• Resonant Tunneling Magneto Resistance in Coupled Quantum Wells
• Theory of digital magneto resistance in ferromagnetic resonant tunneling diodes
• Quantum size effects on spin-tunneling time in a magnetic resonant tunneling diode
• Magnetoelectric bistabilities in ferromagnetic resonant tunneling structures