Theory of digital magneto resistance in ferromagnetic resonant tunneling diodes

Abstract

We propose a ferromagnetic spintronic system, which consists of two serial connected resonant tunneling diodes. One diode is nonmagnetic whereas the other comprises a ferromagnetic emitter and quantum well. Using a selfconsistent coherent transport model we show that the current-voltage characteristic of the ferromagnetic diode can be strongly modulated by changing the relative orientation of the magnetizations in the emitter and quantum well, respectively. By a continuous change of the relative magnetization angle the total resistance exhibits a discrete jump realizing digital magneto resistance. The interplay between the emitter's Fermi energy level and the relative magnetization orientations allows to tailor the current voltage characteristics of the ferromagnetic diode from ohmic to negative differential resistance regime at low voltages.

arXiv comment9 pages, 8 figures

References in corpus (12)

• Spintronics: Fundamentals and applications
• Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors
• Theory of ferromagnetic (III,Mn)V semiconductors
• Ferromagnetic semiconductors
• Voltage-Controlled Spin Selection in a Magnetic Resonant Tunnelling Diode
• Two Dimensional Diluted Magnetic Semiconductor Systems
• Epitaxial Growth of an n-type Ferromagnetic Semiconductor CdCr2Se4 on GaAs(001) and GaP(001)
• Resonant Tunneling Magneto Resistance in Coupled Quantum Wells
• Electron Spin Polarization in Resonant Interband Tunneling Devices
• Controlling the Spin Polarization of the Electron Current in a Semimagnetic Resonant-Tunneling Diode
• Bias voltage controlled magnetization switch in ferromagnetic semiconductor resonant tunneling diodes
• Proposal for a digital converter of analog magnetic signals

Cited by in corpus (10)

• Semiconductor Spintronics
• Quantum-level control in a III-V-based ferromagnetic-semiconductor heterostructure with a GaMnAs quantum well and double barriers
• Spin filter effect at room temperature in GaN/GaMnN ferromagnetic resonant tunneling diode
• Proposal for a ferromagnetic multiwell spin oscillator
• Self-sustained magnetoelectric oscillations in magnetic resonant tunneling structures
• Electrical control of ferromagnetism in Mn-doped semiconductor heterostructures
• Quantum size effects on spin-tunneling time in a magnetic resonant tunneling diode
• Optical orientation in bipolar spintronic devices
• Magnetoelectric bistabilities in ferromagnetic resonant tunneling structures
• Perspectives in spintronics: magnetic resonant tunneling, spin-orbit coupling, and GaMnAs