Voltage-Controlled Spin Selection in a Magnetic Resonant Tunnelling Diode

Abstract

We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter.

To be published in Phys. Rev. Lett

References in corpus (2)

• Electrical Spin Injection in a Ferromagnetic / Tunnel Barrier/ Semiconductor Heterostructure
• Large magnetoresistance effect due to spin-injection into a non-magnetic semiconductor

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