Spin dependent electron transport through a magnetic resonant tunneling diode

Abstract

Electron transport properties in nanostructures can be modeled, for example, by using the semiclassical Wigner formalism or the quantum mechanical Green's functions formalism. We compare the performance and the results of these methods in the case of magnetic resonant-tunneling diodes. We have implemented the two methods within the self-consistent spin-density-functional theory. Our numerical implementation of the Wigner formalism is based on the finite-difference scheme whereas for the Green's function formalism the finite-element method is used. As a specific application, we consider the device studied by Slobodskyy et all. [Phys. Rev. Lett. 90, 246601 (2003)] and analyze their experimental results. The Wigner and Green's functions formalisms give similar electron densities and potentials but, surprisingly, the former method requires much more computer resources in order to obtain numerically accurate results for currents. Both of the formalisms can successfully be used to model magnetic resonant tunneling diode structures.

13 pages and 12 figures

References in corpus (7)

• Electrical Spin Injection in a Ferromagnetic / Tunnel Barrier/ Semiconductor Heterostructure
• Time-Dependent Partition-Free Approach in Resonant Tunneling Systems
• Voltage-Controlled Spin Selection in a Magnetic Resonant Tunnelling Diode
• Large magnetoresistance effect due to spin-injection into a non-magnetic semiconductor
• Non-Equilibrium Electron Transport in Two-Dimensional Nano-Structures Modeled by Green's Functions and the Finite-Element Method
• Electron transport through quantum wires and point contacts
• Multi-band Wigner Function Formulation of Quantum Transport

Cited by in corpus (8)

• Semiconductor Spintronics
• Intrinsic oscillations of spin current polarization in a paramagnetic resonant tunneling diode
• Zero field spin polarization in a 2D paramagnetic resonant tunneling diode
• Nonequilibrium thermodynamics of interacting tunneling transport: variational grand potential, density-functional formulation, and nature of steady-state forces
• Spin filter effect at room temperature in GaN/GaMnN ferromagnetic resonant tunneling diode
• Spin dependent resonant tunneling through 6 micron diameter double barrier resonant tunneling diode
• Quantum size effects on spin-tunneling time in a magnetic resonant tunneling diode
• First-principles study of electron transport in few-electron open quantum dots by the Hartree-Fock approach