Magnitude of Magnetic Field Dependence of a Possible Selective Spin Filter in ZnSe/Zn_{1-x}Mn_{x}Se Multilayer Heterostructure

Abstract

Spin-polarized transport through a band-gap-matched ZnSe/Zn_{1-x}Mn_{x} Se/ZnSe/Zn_{1-x}Mn_{x}Se/ZnSe multilayer structure is investigated. The resonant transport is shown to occur at different energies for different spins owing to the split of spin subbands in the paramagnetic layers. It is found that the polarization of current density can be reversed in a certain range of magnetic field, with the peak of polarization moving towards a stronger magnetic field for increasing the width of central ZnSe layer while shifting towards an opposite direction for increasing the width of paramagnetic layer. The reversal is limited in a small-size system. A strong suppression of the spin up component of the current density is present at high magnetic field. It is expected that such a reversal of the polarization could act as a possible mechanism for a selective spin filter device.

References in corpus (5)

• Basic obstacle for electrical spin-injection from a ferromagnetic metal into a diffusive semiconductor
• Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem
• Voltage-Controlled Spin Selection in a Magnetic Resonant Tunnelling Diode
• Spin filtering and magnetoresistance in ballistic tunnel junctions
• Spin-depedent transmission of holes through periodically modulated diluted magnetic semiconductor waveguides

Cited by in corpus (2)

• Semiconductor Spintronics
• Selective Spin Injection Controlled by Electrical way in Ferromagnet/Quantum Dot/Semiconductor system