Spin-dependent resonant tunneling in ZnSe/ZnMnSe heterostructures
arXiv:cond-mat/0509067 · doi:10.1016/j.physe.2005.01.015
Abstract
Using the transfer matrix method and the effective-mass approximation, the effect of resonant states on spin transport is studied in ZnSe/ZnMnSe/ZnSe/ZnMnSe/ZnSe structures under the influence of both electric and magnetic fields. The numerical results show that the ZnMnSe layers, which act as spin filters, polarize the electric currents. Variation of thickness of the central ZnSe layer shifts the resonant levels and exhibits an oscillatory behavior in spin current densities. It is also shown that the spin polarization of the tunneling current in geometrical asymmetry of the heterostructure where two ZnMnSe layers have different Mn concentrations, depends strongly on the thickness and the applied bias.
13 pages, 6 figures
References in corpus (5)
- Voltage-Controlled Spin Selection in a Magnetic Resonant Tunnelling Diode
- Tunnel magnetoresistance in double spin filter junctions
- The effects of a magnetic barrier and a nonmagnetic spacer in tunnel structures
- Oscillating magnetoresistance in diluted magnetic semiconductor barrier structures
- Temperature and voltage dependence of magnetic barrier junctions with a nonmagnetic spacer
Cited by in corpus (5)
- Semiconductor Spintronics
- Zero field spin polarization in a 2D paramagnetic resonant tunneling diode
- Quantum size effects on spin-tunneling time in a magnetic resonant tunneling diode
- The effects of Mn concentration on spin-polarized transport through ZnSe/ZnMnSe/ZnSe heterostructures
- Surface state transport in double-gated and magnetized topological insulators with hexagonal warping effects