Spin control in heteromagnetic nanostructures
arXiv:cond-mat/0411269 · doi:10.1063/1.1906322
Abstract
The rapidly expanding research in Spintronics, the electronics utilizing the electron spin instead of its charge, is driven by the very interesting potential applications. The actual task is to develop principles for the spin manipulations in spintronic devices. In this Report we suggest and verify experimentally a concept of heteromagnetic semiconductor structures. It is based on spin diffusion between layers of the nanostructure with different magnetic properties and allows controlling the spin-switching rate for magnetic ions. A ten times increase of spin-lattice relaxation rate of magnetic Mn-ions is achieved in (Zn,Mn)Se/(Be,Mn)Te heteromagnetic structures with an inhomogeneous distribution of Mn-ions.
8 pages, 4 figures
References in corpus (2)
Cited by in corpus (6)
- Spin dynamics in semiconductors
- Spin-lattice relaxation of Mn-ions in ZnMnSe/ZnBeSe quantum wells measured under pulsed photoexcitation
- Engineering of spin-lattice relaxation dynamics by digital growth of diluted magnetic semiconductor CdMnTe
- Spin diffusion in the Mn2+ ion system of II-VI diluted magnetic semiconductor heterostructures
- Electric field control of magnetization dynamics in ZnMnSe/ZnBeSe diluted-magnetic-semiconductor heterostructures
- Strong spintronic magnetoelectric effect in layered magnetic metamaterial