activity
19972020
most citedBinding Energy of Charged Excitons in ZnSe-based Quantum Wells

107 citations · 412 across the 19 of their papers we have counts for

collaborators

19 papers

physics.optics2020★ 4 cited

Optical second and third harmonic generation on excitons in ZnSe/BeTe quantum wells

Johannes Mund, Andreas Farenbruch, Dmitri R. Yakovlev +3

Optical harmonic generation on excitons is found in ZnSe/BeTe quantum wells with type-II band alignment. Two experimental approaches with spectrally-broad femtosecond laser pulses…

physics.app-ph2019★ 2 cited

Plasma Profiling Time-of-Flight Mass Spectrometry for Fast Elemental Analysis of Semiconductor Structures with Depth Resolution in the Nanometer Range

Hendrik Spende, Christoph Margenfeld, Tobias Meyer +6

Plasma profiling time of flight mass spectrometry (PP-TOFMS) has recently gained interest, as it enables the elemental profiling of semiconductor structures with high depth resolut…

physics.app-ph2019★ 10 cited

Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in the nanowire ensemble

David van Treeck, Johannes Ledig, Gregor Scholz +7

We present the combined analysis of the electroluminescence (EL) as well as the current-voltage (I-V) behavior of single, freestanding (In,Ga)N/GaN nanowire (NW) light-emitting dio…

cond-mat.mtrl-sci2013★ 15 cited

Angle-Dependent Spin-Wave Resonance Spectroscopy of (Ga,Mn)As Films

L. Dreher, C. Bihler, E. Peiner +5

A modeling approach for standing spin-wave resonances based on a finite-difference formulation of the Landau-Lifshitz-Gilbert equation is presented. In contrast to a previous study…

cond-mat.mes-hall2012★ 18 cited

Spin noise spectroscopy of donor bound electrons in ZnO

H. Horn, A. Balocchi, X. Marie +4

We investigate the intrinsic spin dynamics of electrons bound to Al impurities in bulk ZnO by optical spin noise spectroscopy. Spin noise spectroscopy enables us to investigate the…

cond-mat.mes-hall2011★ 3 cited

Observation of interface carrier states in no-common-atom heterostructures ZnSe/BeTe

A. S. Gurevich, V. P. Kochereshko, J. Bleuse +3

Existence of intrinsic carrier interface states in heterostructures with no common atom at the interface (such as ZnSe/BeTe) is evidenced experimentally by ellipsometry and photolu…