Self-sustained magnetoelectric oscillations in magnetic resonant tunneling structures
arXiv:0805.4068 · doi:10.1103/PhysRevLett.101.077202
Abstract
The dynamic interplay of transport, electrostatic, and magnetic effects in the resonant tunneling through ferromagnetic quantum wells is theoretically investigated. It is shown that the carrier-mediated magnetic order in the ferromagnetic region not only induces, but also takes part in intrinsic, robust, and sustainable high-frequency current oscillations over a large window of nominally steady bias voltages. This phenomenon could spawn a new class of quantum electronic devices based on ferromagnetic semiconductors.
arXiv comment5 pages, 4 figures
References in corpus (15)
- Theory of ferromagnetic (III,Mn)V semiconductors
- Semiconductor Spintronics
- Temperature-dependent magnetization in diluted magnetic semiconductors
- Interlayer coupling in ferromagnetic semiconductor superlattices
- Voltage-Controlled Spin Selection in a Magnetic Resonant Tunnelling Diode
- Light and electric field control of ferromagnetism in magnetic quantum structures
- Theory of Ferromagnetism in Diluted Magnetic Semiconductor Quantum Wells
- Ultrafast Enhancement of Ferromagnetism via Photoexcited Holes in GaMnAs
- Quantum-size effect and tunneling magnetoresistance in ferromagnetic-semiconductor quantum heterostructures
- Field-domain spintronics in magnetic semiconductor multiple quantum wells
- Resonant Tunneling Magneto Resistance in Coupled Quantum Wells
- Theory of digital magneto resistance in ferromagnetic resonant tunneling diodes
- Spin-polarized current oscillations in diluted magnetic semiconductor multiple quantum wells
- Bias voltage controlled magnetization switch in ferromagnetic semiconductor resonant tunneling diodes
- Spin separation in digital ferromagnetic heterostructures