Spin injection in a single metallic nanoparticle: a step towards nanospintronics

Abstract

We have fabricated nanometer sized magnetic tunnel junctions using a new nanoindentation technique in order to study the transport properties of a single metallic nanoparticle. Coulomb blockade effects show clear evidence for single electron tunneling through a single 2.5 nm Au cluster. The observed magnetoresistance is the signature of spin conservation during the transport process through a non magnetic cluster.

3 pages

References in corpus (9)

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• Spectroscopy of discrete energy levels in ultrasmall metallic grains
• Tunnel magnetoresistance of quantum dots coupled to ferromagnetic leads in the sequential and cotunneling regimes
• Spin-accumulation in small ferromagnetic double barrier junctions
• Spin-Dependent Coulomb Blockade in Ferromagnet/Normal-Metal/Ferromagnet Double Tunnel Junctions
• Nanolithography based on real-time electrically-controlled indentation with an atomic force microscope for nanocontacts elaboration
• Evidence for Suppression of Superconductivity by Spin Imbalance in Co-Al-Co single electron transistors
• Spin accumulation in ferromagnetic single-electron transistors in the cotunneling regime
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Cited by in corpus (30)

• Unravelling the role of the interface for spin injection into organic semiconductors
• Graphene-Passivated Nickel as an Oxidation-Resistant Electrode for Spintronics
• Spin effects in single electron tunneling
• Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads
• Effects of different geometries on the conductance, shot noise and tunnel magnetoresistance of double quantum dots
• Transport through quantum-dot spin valves containing magnetic impurities
• Spin-resolved Andreev transport through double-quantum-dot Cooper pair splitters
• Electronic waiting-time distribution of a quantum-dot spin valve
• Transport through a double quantum dot system with non-collinearly polarized leads
• Spin-induced charge correlations in transport through interacting quantum dots with ferromagnetic leads
• Cotunneling through quantum dots coupled to magnetic leads: zero-bias anomaly for non-collinear magnetic configurations
• Probing the exchange field of a quantum-dot spin valve by a superconducting lead
• Negative tunnel magnetoresistance and differential conductance in transport through double quantum dots
• Superconducting proximity effect and zero-bias anomaly in transport through quantum dots weakly attached to ferromagnetic leads
• Theory of a Magnetically-Controlled Quantum-Dot Spin Transistor
• Saturation of Spin-Polarized Current in Nanometer Scale Aluminum Grains
• Exchange effects on electron transport through single-electron spin-valve transistors
• Shot noise and tunnel magnetoresistance in multilevel quantum dots: Effects of cotunneling
• Influence of spin waves on transport through a quantum-dot spin valve
• Spin-polarized transport through weakly coupled double quantum dots in the Coulomb-blockade regime
• Theory of spin pumping through an interacting quantum dot tunnel coupled to a ferromagnet with time-dependent magnetization
• Electronic statistics-on-demand: bunching, anti-bunching, positive and negative correlations in a molecular spin-valve
• Theory of transport through noncollinear single-electron spin-valve transistors
• Anisotropic magneto-Coulomb effect versus spin accumulation in a ferromagnetic single-electron device
• The tunnel magnetoresistance in chains of quantum dots weakly coupled to external leads
• Modelling Electron Spin Accumulation in a Metallic Nanoparticle
• Conductance in Co/Al2O3/Si/Al2O3 permalloy with asymmetrically doped barrier
• Thomas precession, persistent spin currents and quantum forces
• Current fluctuations of noncollinear single-electron spin-valve transistors
• Gate control of spin-polarized conductance in alloyed transition metal nano-contacts