Modelling Electron Spin Accumulation in a Metallic Nanoparticle
arXiv:0809.2235 · doi:10.1103/PhysRevB.78.035435
Abstract
A model describing spin-polarized current via discrete energy levels of a metallic nanoparticle, which has strongly asymmetric tunnel contacts to two ferromagnetic leads, is presented. In absence of spin-relaxation, the model leads to a spin-accumulation in the nanoparticle, a difference () between the chemical potentials of spin-up and spin-down electrons, proportional to the current and the Julliere's tunnel magnetoresistance. Taking into account an energy dependent spin-relaxation rate , as a function of bias voltage () exhibits a crossover from linear to a much weaker dependence, when equals the spin-polarized current through the nanoparticle. Assuming that the spin-relaxation takes place via electron-phonon emission and Elliot-Yafet mechanism, the model leads to a crossover from linear to dependence. The crossover explains recent measurements of the saturation of the spin-polarized current with in Aluminum nanoparticles, and leads to the spin-relaxation rate of in an Aluminum nanoparticle of diameter , for a transition with an energy difference of one level spacing.
37 pages, 7 figures
References in corpus (30)
- Spintronics: Fundamentals and applications
- Spin relaxation in semiconductor quantum dots
- Spin-flip transitions between Zeeman sublevels in semiconductor quantum dots
- Zeeman energy and spin relaxation in a one-electron quantum dot
- Spin injection and spin accumulation in all-metal mesoscopic spin valves
- Spin relaxation of conduction electrons in polyvalent metals: A realistic calculation
- Solving rate equations for electron tunneling via discrete quantum states
- Tunnel magnetoresistance of quantum dots coupled to ferromagnetic leads in the sequential and cotunneling regimes
- Spin-accumulation in small ferromagnetic double barrier junctions
- Chaos, interactions, and nonequilibrium effects in the tunneling resonance spectra of small metallic particles
- Phonon-induced spin relaxation of conduction electrons in aluminum
- Spin injection in a single metallic nanoparticle: a step towards nanospintronics
- Spin-Dependent Coulomb Blockade in Ferromagnet/Normal-Metal/Ferromagnet Double Tunnel Junctions
- Spin effects in ferromagnetic single-electron transistors
- Magnetoresistance of the double-tunnel-junction Coulomb Blockade with magnetic metals
- The Magneto-coulomb effect in spin valve devices
- The g-factors of discrete levels in nanoparticles
- Fluctuating spin g-tensor in small metal grains
- Studies of spin-orbit scattering in noble-metal nanoparticles using energy level tunneling spectroscopy
- Spin-dependent tunneling and Coulomb blockade in ferromagnetic nanoparticles
- Non-equilibrium spin accumulation in ferromagnetic single-electron transistors
- Nonequilibrium spin distribution in single-electron transistor
- Spin-Polarized Electron Transport through Nanometer-Scale Al Grains
- Hanle Effect in Transport through Quantum Dots Coupled to Ferromagnetic Leads
- Linear response conductance and magneto-resistance of ferromagnetic single-electron transistors
- Theory of a Magnetically-Controlled Quantum-Dot Spin Transistor
- Gate-controlled spin polarized current in ferromagnetic single electron transistors
- Exchange effects on electron transport through single-electron spin-valve transistors
- Saturation of Spin-Polarized Current in Nanometer Scale Aluminum Grains
- Magnetic-field dependence of energy levels in ultrasmall metal grains