Nonequilibrium spin distribution in single-electron transistor

Abstract

Single-electron transistor with ferromagnetic outer electrodes and nonmagnetic island is studied theoretically. Nonequilibrium electron spin distribution in the island is caused by tunneling current. The dependencies of the magnetoresistance ratio $\delta$ on the bias and gate voltages show the dips which are directly related to the induced separation of Fermi levels for electrons with different spins. Inside a dip $\delta$ can become negative.

11 pages, 2 eps figures

References in corpus (2)

• Spin Polarization and Magneto-Coulomb Oscillations in Ferromagnetic Single Electron Devices
• Magneto-Coulomb Oscillation in Ferromagnetic Single Electron Transistors

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