Theory of a Magnetically-Controlled Quantum-Dot Spin Transistor
arXiv:0705.0648 · doi:10.1103/PhysRevB.76.125306
Abstract
We examine transport through a quantum dot coupled to three ferromagnetic leads in the regime of weak tunnel coupling. A finite source-drain voltage generates a nonequilibrium spin on the otherwise non-magnetic quantum dot. This spin accumulation leads to magnetoresistance. A ferromagnetic but current-free base electrode influences the quantum-dot spin via incoherent spin-flip processes and coherent spin precession. As the dot spin determines the conductance of the device, this allows for a purely magnetic transistor-like operation. We analyze the effect of both types of processes on the electric current in different geometries.
7 pages, 6 figures
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- Spin-polarized current and shot noise in the presence of spin flip in a quantum dot via nonequilibrium Green's functions
- Adiabatic charge and spin pumping through quantum dots with ferromagnetic leads
- Tunable dynamical channel blockade in double-dot Aharonov-Bohm interferometers
- Conserved spin and orbital phase along carbon nanotubes connected with multiple ferromagnetic contacts
- Controlling spin polarization of a quantum dot via a helical edge state
- Modelling Electron Spin Accumulation in a Metallic Nanoparticle