Spin-Flip Transistor

Abstract

The recently developed semiclassical theory for magnetoelectronic circuits is applied to a transistor-like device consisting of a normal metal island and three magnetic terminals. The electric current between source and drain can be controlled by the magnetization of a ``base'' reservoir up to distances of the order of the spin-flip diffusion length.

Proceedings of NATO-ARW on Semiconductor Nanostructures, 5-9 February 2001, Queenstown, NZ, to be published in Physica E

References in corpus (3)

• Current-driven Magnetization Reversal and Spin Wave Excitations in Co/Cu/Co Pillars
• Finite-element theory of transport in ferromagnet-normal metal systems
• The Role of Spin-Dependent Interface Scattering in Generating Current-Induced Torques in Magnetic Multilayers

Cited by in corpus (4)

• Universal angular magnetoresistance and spin torque in ferromagnetic/normal metal hybrids
• Theory of a Magnetically-Controlled Quantum-Dot Spin Transistor
• Modeling of Spin Metal-Oxide-Semiconductor Field-Effect-Transistor: A Non-Equilibrium Green's Function Approach with Spin Relaxation
• Twofold twist defect chains at criticality