Parity Effect and Tunnel Magnetoresistance of Ferromagnet / Superconductor / Ferromagnet Single-Electron Tunneling Transistors

Abstract

We theoretically study the tunnel magnetoresistance(TMR) of ferromagnet / superconductor / ferromagnet single-electron tunneling transistors with a special attention to the parity effect. It is shown that in the plateau region, there is no spin accumulation in the island even at finite bias voltage. However, the information of the injected spin is carried by the excess electron and thus the TMR exists. The spin relaxation rate of the excess electron can be estimated from the TMR. We also show that the TMR increases with decreasing the size of the superconducting island.

5 pages, 3 figures, to appear in Phys. Rev. B

References in corpus (2)

• Evidence for Suppression of Superconductivity by Spin Imbalance in Co-Al-Co single electron transistors
• The effect of charge fluctuation on a normal-superconducting-normal single-electron transistor

Cited by in corpus (3)

• Spectral Properties of the Wilson Dirac Operator and random matrix theory
• Giant fluctuations of superconducting order parameter in Ferromagnet/superconductor single electron transistors
• Surprising Pfaffian factorizations in Random Matrix Theory with Dyson index $\beta =2$