Unravelling the role of the interface for spin injection into organic semiconductors

Abstract

Whereas spintronics brings the spin degree of freedom to electronic devices, molecular/organic electronics adds the opportunity to play with the chemical versatility. Here we show how, as a contender to commonly used inorganic materials, organic/molecular based spintronics devices can exhibit very large magnetoresistance and lead to tailored spin polarizations. We report on giant tunnel magnetoresistance of up to 300% in a (La,Sr)MnO3/Alq3/Co nanometer size magnetic tunnel junction. Moreover, we propose a spin dependent transport model giving a new understanding of spin injection into organic materials/molecules. Our findings bring a new insight on how one could tune spin injection by molecular engineering and paves the way to chemical tailoring of the properties of spintronics devices.

Original version. Revised version to appear in Nature Physics.

References in corpus (4)

• Dipole formation at metal/PTCDA interfaces: Role of the Charge Neutrality Level
• Spin injection in a single metallic nanoparticle: a step towards nanospintronics
• Energy level alignment at Alq3/La0.7Sr0.3MnO3 interface for organic spintronic devices
• Resonant magnetoresistance in organic spin-valves

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