Energy level alignment at Alq3/La0.7Sr0.3MnO3 interface for organic spintronic devices

Abstract

The electronic structure of the interface between Tris (8-hydroxyquinolino)-aluminum (Alq3) and La0.7Sr0.3MnO3 manganite (LSMO) was investigated by means of photoelectron spectroscopy. As demonstrated recently this interface is characterized by efficient spin injection in organic spintronic devices. We detected a strong interface dipole of about 0.9 eV that shifts down the whole energy diagram of the Alq3 with respect to the vacuum level. This modifies the height of the barriers for the holes injection to 1.7 eV, indicating that hole injection from LSMO into Alq3 is more difficult than it was expected as the energy level matched by vacuum levels. We believe the interface dipole is due to the intrinsic dipole moment characteristic for Alq3 layer. An additional weak interaction is observed between the two materials influencing the N 1s core levels of the organic semiconductor. The presented data are of greatest importance for both qualitative and quantitative description of the organic spin valves.

arXiv comment17 pages, 4 figures

References in corpus (4)

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• In situ photoemission study on atomically-controlled La${}_{1-x}$Sr${}_x$MnO${}_3$ thin films: Composition dependence of the electronic structure
• Micro-Raman and resistance measurements of epitaxial La0.7Sr0.3MnO3 films
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Cited by in corpus (9)

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• Hybrid Interface States and Spin Polarization at Ferromagnetic Metal-Organic Heterojunctions: Interface Engineering for Efficient Spin Injection in Organic Spintronics
• Hanle effect missing in a prototypical organic spintronic device
• Ferrodistortive instability at the (001) surface of half-metallic manganites
• Effects of carrier mobility and morphology in organic semiconductor spin valves
• Controlling magnetoresistance by oxygen impurities in Mq3-based molecular spin valves
• Cu_{2}O as nonmagnetic semiconductor for spin transport in crystalline oxide electronics