772 citations · 1.3k across the 17 of their papers we have counts for
15 papers
Post-growth shaping and transport anisotropy in 2D InAs nanofins
J. Seidl, J. G. Gluschke, X. Yuan +4
We report on the post-growth shaping of free-standing 2D InAs nanofins that are grown by selective-area epitaxy and mechanically transferred to a separate substrate for device fabr…
InAs-Al Hybrid Devices Passing the Topological Gap Protocol
Morteza Aghaee, Arun Akkala, Zulfi Alam +124
We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majora…
Impact of invasive metal probes on Hall measurements in semiconductor nanostructures
J. G. Gluschke, J. Seidl, H. H. Tan +3
Recent advances in bottom-up growth are giving rise to a range of new two-dimensional nanostructures. Hall effect measurements play an important role in their electrical characteri…
Exploring the Band Structure of Wurtzite InAs Nanowires Using Photocurrent Spectroscopy
Seyyedesadaf Pournia, Samuel Linser, Giriraj Jnawali +8
We use polarized photocurrent spectroscopy in a nanowire device to investigate the band structure of hexagonal Wurtzite InAs. Signatures of optical transitions between four valence…
Regaining a spatial dimension: Mechanically transferrable two-dimensional InAs nanofins grown by selective area epitaxy
J. Seidl, J. G. Gluschke, X. Yuan +6
We report a method for growing rectangular InAs nanofins with deterministic length, width and height by dielectric-templated selective-area epitaxy. These freestanding nanofins can…
Strong Hot Carrier Effects Observed in a Single Nanowire Heterostructure
Iraj Abbasian Shojaei, Samuel Linser, Giriraj Jnawali +9
We use Transient Rayleigh Scattering to study the thermalization of hot photoexcited carriers in single GaAsSb/InP nanowire heterostructures. By comparing the energy loss rate in s…