772 citations · 1.3k across the 17 of their papers we have counts for
13 papers · 1 filter
Post-growth shaping and transport anisotropy in 2D InAs nanofins
J. Seidl, J. G. Gluschke, X. Yuan +4
We report on the post-growth shaping of free-standing 2D InAs nanofins that are grown by selective-area epitaxy and mechanically transferred to a separate substrate for device fabr…
InAs-Al Hybrid Devices Passing the Topological Gap Protocol
Morteza Aghaee, Arun Akkala, Zulfi Alam +124
We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majora…
Impact of invasive metal probes on Hall measurements in semiconductor nanostructures
J. G. Gluschke, J. Seidl, H. H. Tan +3
Recent advances in bottom-up growth are giving rise to a range of new two-dimensional nanostructures. Hall effect measurements play an important role in their electrical characteri…
Exploring the Band Structure of Wurtzite InAs Nanowires Using Photocurrent Spectroscopy
Seyyedesadaf Pournia, Samuel Linser, Giriraj Jnawali +8
We use polarized photocurrent spectroscopy in a nanowire device to investigate the band structure of hexagonal Wurtzite InAs. Signatures of optical transitions between four valence…
Regaining a spatial dimension: Mechanically transferrable two-dimensional InAs nanofins grown by selective area epitaxy
J. Seidl, J. G. Gluschke, X. Yuan +6
We report a method for growing rectangular InAs nanofins with deterministic length, width and height by dielectric-templated selective-area epitaxy. These freestanding nanofins can…
Strong Hot Carrier Effects Observed in a Single Nanowire Heterostructure
Iraj Abbasian Shojaei, Samuel Linser, Giriraj Jnawali +9
We use Transient Rayleigh Scattering to study the thermalization of hot photoexcited carriers in single GaAsSb/InP nanowire heterostructures. By comparing the energy loss rate in s…
p-GaAs nanowire MESFETs with near-thermal limit gating
A. R. Ullah, F. Meyer, J. G. Gluschke +5
Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping effects present two major challenges for III-V complementary metal-oxide semiconduc…
Study of 0- phase transition in hybrid superconductor-InSb nanowire quantum dot devices
S. Li, N. Kang, P. Caroff +1
Hybrid superconductor-semiconducting nanowire devices provide an ideal platform to investigating novel intragap bound states, such as the Andreev bound states (ABSs), Yu-Shiba-Rusi…
Formation of Long Single Quantum Dots in High Quality InSb Nanowires Grown by Molecular Beam Epitaxy
Dingxun Fan, Sen Li, N. Kang +6
We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50…
Magneto-transport Subbands Spectroscopy in InAs Nanowires
Florian Vigneau, Vladimir Prudkovkiy, Ivan Duchemin +6
We report on magneto-transport measurements in InAs nanowires under large magnetic field (up to 55T), providing a direct spectroscopy of the 1D electronic band structure. Large mod…
Persistent enhancement of the carrier density in electron irradiated InAs nanowires
Corentin Durand, Maxime Berthe, Younes Makoudi +4
We report a significant and persistent enhancement of the conductivity in free-standing non intentionnaly doped InAs nanowires upon irradiation in ultra high vacuum. Combining four…
Superconductor-Nanowire Devices from Tunneling to the Multichannel Regime: Zero-Bias Oscillations and Magnetoconductance Crossover
H. O. H. Churchill, V. Fatemi, K. Grove-Rasmussen +4
We present transport measurements in superconductor-nanowire devices with a gated constriction forming a quantum point contact. Zero-bias features in tunneling spectroscopy appear…
Correlation-induced conductance suppression at level degeneracy in a quantum dot
H. A. Nilsson, O. Karlström, M. Larsson +6
The large, level-dependent g-factors in an InSb nanowire quantum dot allow for the occurrence of a variety of level crossings in the dot. While we observe the standard conductance…