Towards high mobility InSb nanowire devices

Abstract

We study the low-temperature electron mobility of InSb nanowires. We extract the mobility at 4.2 Kelvin by means of field effect transport measurements using a model consisting of a nanowire-transistor with contact resistances. This model enables an accurate extraction of device parameters, thereby allowing for a systematic study of the nanowire mobility. We identify factors affecting the mobility, and after optimization obtain a field effect mobility of $\sim 2.5\times 10^4$ cm${}^2$/Vs. We further demonstrate the reproducibility of these mobility values which are among the highest reported for nanowires. Our investigations indicate that the mobility is currently limited by adsorption of molecules to the nanowire surface and/or the substrate.

13 pages, 5 figures (main text); 7 pages, 2 figures, 2 tables (supplementary text)

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• Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions
• Formation of Long Single Quantum Dots in High Quality InSb Nanowires Grown by Molecular Beam Epitaxy
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• A Roadmap for Controlled and Efficient n-type Doping of Self-assisted GaAs Nanowires Grown by Molecular Beam Epitaxy
• Hybrid Superconductor-Quantum Point Contact Devices using InSb Nanowires
• Intrinsic spin-orbit interaction in diffusive normal wire Josephson weak links: supercurrent and density of states
• Experimental review on Majorana zero-modes in hybrid nanowires
• Gate defined quantum dot realized in a single crystalline InSb nanosheet
• Curvature of gap closing features and the extraction of Majorana nanowire parameters
• Radio-frequency C-V measurements with sub-attofarad sensitivity
• Cryogenic Multiplexing with Bottom-Up Nanowires
• Josephson radiation and shot noise of a semiconductor nanowire junction
• Phase coherent transport and spin-orbit interaction in GaAs/InSb core/shell nanowires
• Bi2O2Se nanowires presenting high mobility and strong spin-orbit coupling
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• Exfoliated hexagonal BN as gate dielectric for InSb nanowire quantum dots with improved gate hysteresis and charge noise
• Topological gap protocol based machine learning optimization of Majorana hybrid wires
• Diffusive and Ballistic Transport in Ultra-thin InSb Nanowire Devices Using a Few-layer-Graphene-AlOx Gate
• Scalable and Tunable In-Plane Ge/Si(001) Nanowires Grown by Molecular Beam Epitaxy
• Flux-periodic oscillations in proximitized core-shell nanowires
• Quantum oscillations in a hexagonal boron nitride-supported single crystalline InSb nanosheet
• Fabrication and characterization of InSb nanosheet/hBN/graphite heterostructure devices
• Low-field electron mobility of InSb nanowires: Numerical efforts to larger cross sections
• Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices
• Roughness scattering induced insulator-metal-insulator transition in a quantum wire
• Engineering tunnel junctions on ballistic semiconductor nanowires
• Few-Mode and Anisotropic Quantum Transport in InSb Nanoribbons Using an All-van der Waals Material-Based Gate
• Spin-Orbit and Strain Induced Modification in Electrical Properties of Monolayer InSb
• Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon