Gate-tunable kinetic inductance in proximitized nanowires

Abstract

We report the detection of a gate-tunable kinetic inductance in a hybrid InAs/Al nanowire. For this purpose, we have embedded the nanowire into a quarter-wave coplanar waveguide resonator and measured the resonance frequency of the circuit. We find that the resonance frequency can be changed via the gate voltage that controls the electron density of the proximitized semiconductor and thus the nanowire inductance. Applying Mattis-Bardeen theory, we extract the gate dependence of the normal state conductivity of the nanowire, as well as its superconducting gap. Our measurements complement existing characterization methods for hybrid nanowires and provide a new and useful tool for gate-controlled superconducting electronics.

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Cited by in corpus (5)

• Electrostatic control of the proximity effect in the bulk of semiconductor-superconductor hybrids
• Superconducting resonators with voltage-controlled frequency and nonlinearity
• Mitigation of quasiparticle loss in superconducting qubits by phonon scattering
• Microwave spectroscopy of interacting Andreev spins
• Few-mode to mesoscopic junctions in gatemon qubits