Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon

Abstract

We present a superconductor-semiconductor material system that is both scalable and monolithically integrated on a silicon substrate. It uses selective area growth of Al-InAs hybrid structures on a planar III-V buffer layer, grown directly on a high resistivity silicon substrate. We characterized the electrical properties of this material system at millikelvin temperatures and observed a high average field-effect mobility of $\mu \approx 3200\mathrm{c}{\mathrm{m}}^2/Vs$ for the InAs channel, and a hard induced superconducting gap. Josephson junctions exhibited a high interface transmission, $\mathcal{T}\approx 0.75$, gate voltage tunable switching current with a product of critical current and normal state resistance, $I_{\mathrm{C}}{R}_{\mathrm{N}}\approx 83\mu \mathrm{V}$, and signatures of multiple Andreev reflections. These results pave the way for scalable and high coherent gate voltage tunable transmon devices and other superconductor-semiconductor hybrids fabricated directly on silicon.

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