403 citations
- University of CopenhagenDK44 papers
- Microsoft (United States)US16 papers
- Delft University of TechnologyNL14 papers
- QuTechNL9 papers
- University of California, Santa BarbaraUS9 papers
- Purdue University West LafayetteUS8 papers
- California NanoSystems InstituteUS3 papers
- IBM Research - ZurichCH3 papers
- Institute of Science and Technology AustriaAT3 papers
- Technical University of DenmarkDK3 papers
- Eindhoven University of TechnologyNL2 papers
- Forschungszentrum JülichDE2 papers
50 papers
LLM-based event abstraction and integration for IoT-sourced logs
Mohsen Shirali, Mohammadreza Fani Sani, Zahra Ahmadi +1
The continuous flow of data collected by Internet of Things (IoT) devices, has revolutionised our ability to understand and interact with the world across various applications. How…
Self-consistent quasi-particle and hybrid functional calculations for Al/InAs/Al heterojunctions: band offset and spin-orbit coupling effects
H. Ness, F. Corsetti, D. Pashov +4
The electronic structure of surfaces and interfaces plays a key role in the properties of quantum devices. Here, we study the electronic structure of realistic Al/InAs/Al heterojun…
Digital Twin-Enabled Intelligent DDoS Detection Mechanism for Autonomous Core Networks
Yagmur Yigit, Bahadir Bal, Aytac Karameseoglu +2
Existing distributed denial of service attack (DDoS) solutions cannot handle highly aggregated data rates; thus, they are unsuitable for Internet service provider (ISP) core networ…
Few-mode to mesoscopic junctions in gatemon qubits
Alisa Danilenko, Deividas Sabonis, Georg W. Winkler +3
We investigate a semiconductor nanowire-based gatemon qubit with epitaxial Al on two facets of the nanowire, allowing gate control of wire density. Two segments have the Al removed…
Gate-Tunable Transmon Using Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon
A. Hertel, M. Eichinger, L. O. Andersen +12
We present a gate-voltage tunable transmon qubit (gatemon) based on planar InAs nanowires that are selectively grown on a high resistivity silicon substrate using III-V buffer laye…
Radio-frequency C-V measurements with sub-attofarad sensitivity
Filip K. Malinowski, Lin Han, Damaz de Jong +9
We demonstrate the use of radio-frequency (rf) resonators to measure the capacitance of nano-scale semiconducting devices in field-effect transistor configurations. The rf resonato…