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researcher

M. Eichinger

3 papers hereh-index 355 citations4 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author3

Across the 3 of 3 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall2
  • cond-mat.mtrl-sci1
same name
  • M. Eichinger — 1 paper, h 7

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20192022
most citedGate-Tunable Transmon Using Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon

37 citations · 37 across the 2 of their papers we have counts for

collaborators

3 papers

cond-mat.mes-hall2022★ 37 cited

Gate-Tunable Transmon Using Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon

A. Hertel, M. Eichinger, L. O. Andersen +12

We present a gate-voltage tunable transmon qubit (gatemon) based on planar InAs nanowires that are selectively grown on a high resistivity silicon substrate using III-V buffer laye…

cond-mat.mes-hall2021

Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon

A. Hertel, L. O. Andersen, D. M. T. van Zanten +9

We present a superconductor-semiconductor material system that is both scalable and monolithically integrated on a silicon substrate. It uses selective area growth of Al-InAs hybri…

cond-mat.mtrl-sci2019

Air tightness of hBN encapsulation and its impact on Raman spectroscopy of van der Waals materials

Johannes Holler, Lorenz Bauriedl, Tobias Korn +8

Raman spectroscopy is a precious tool for the characterization of van der Waals materials, e.g. for the determination of the layer number in thin exfoliated flakes. For sensitive m…

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