Gate-Tunable Transmon Using Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon

Abstract

We present a gate-voltage tunable transmon qubit (gatemon) based on planar InAs nanowires that are selectively grown on a high resistivity silicon substrate using III-V buffer layers. We show that low loss superconducting resonators with an internal quality of $2\times 10^5$ can readily be realized using these substrates after the removal of buffer layers. We demonstrate coherent control and readout of a gatemon device with a relaxation time, $T_1\approx 700\mathrm{ns}$, and dephasing times, $T_2^{\ast }\approx 20\mathrm{ns}$ and $T_{2,\mathrm{echo}}\approx 1.3\hat{\mathrm{I}}¼\mathrm{s}$. Further, we infer a high junction transparency of $0.4-0.9$ from an analysis of the qubit anharmonicity.