3 papers
cond-mat.mes-hall2023★ 21 cited
Top-down fabrication of bulk-insulating topological insulator nanowires for quantum devices
Matthias Rößler, Dingxun Fan, Felix Münning +8
In a nanowire (NW) of a three-dimensional topological insulator (TI), the quantum-confinement of topological surface states leads to a peculiar subband structure that is useful for…
cond-mat.mes-hall2016
Schottky barrier and contact resistance of InSb nanowire field effect transistors
Dingxun Fan, N Kang, Sepideh Gorji Ghalamestani +2
Understanding of the electrical contact properties of semiconductor nanowire (NW) field effect transistors (FETs) plays a crucial role in employing semiconducting NWs as building b…
cond-mat.mes-hall2016
Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions
S. Li, N. Kang, D. X. Fan +4
Hybrid InSb nanowire-superconductor devices are promising for investigating Majorana modes and topological quantum computation in solid-state devices. An experimental realisation o…