Free-Standing Two-Dimensional Single-Crystalline InSb Nanosheets

Abstract

Growth of high-quality single-crystalline InSb layers remains challenging in material science. Such layered InSb materials are highly desired for searching for and manipulation of Majorana fermions in solid state, a fundamental research task in physics today, and for development of novel high-speed nanoelectronic and infrared optoelectronic devices. Here we report on a new route towards growth of single-crystalline, layered InSb materials. We demonstrate the successful growth of free-standing, two-dimensional InSb nanosheets on one-dimensional InAs nanowires by molecular-beam epitaxy. The grown InSb nanosheets are pure zinc-blende single crystals. The length and width of the InSb nanosheets are up to several micrometers and the thickness is down to ~10 nm. The InSb nanosheets show a clear ambipolar behavior and a high electron mobility. Our work will open up new technology routes towards the development of InSb-based devices for applications in nanoelectronics, optoelectronics and quantum electronics, and for study of fundamental physical phenomena.

32 pages,20 figures

References in corpus (7)

• Signatures of Majorana fermions in hybrid superconductor-semiconductor nanowire devices
• Observation of Majorana Fermions in a Nb-InSb Nanowire-Nb Hybrid Quantum Device
• Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors
• Towards high mobility InSb nanowire devices
• Supercurrent and multiple Andreev reflections in an InSb nanowire Josephson junction
• Parity independence of the zero-bias conductance peak in a nanowire based topological superconductor-quantum dot hybrid device
• Formation of Long Single Quantum Dots in High Quality InSb Nanowires Grown by Molecular Beam Epitaxy

Cited by in corpus (22)

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• Strong spin-orbit interaction and magnetotransport in semiconductor Bi${}_2$O${}_2$Se nanoplates
• Dimension Engineering of Narrow Bandgap Semiconductor InAs Nanostructures in Wafer-Scale
• Crossed Andreev Reflection in InSb Flake Josephson Junctions
• Regaining a spatial dimension: Mechanically transferrable two-dimensional InAs nanofins grown by selective area epitaxy
• Strong and tunable spin-orbit interaction in a single crystalline InSb nanosheet
• Quantum transport in high-quality shallow InSb quantum wells
• Half-integer Shapiro steps in highly transmissive InSb nanoflag Josephson junctions
• High Mobility Free-Standing InSb Nanoflags Grown On InP Nanowire Stems For Quantum Devices
• Gate defined quantum dot realized in a single crystalline InSb nanosheet
• Supercurrent, Multiple Andreev Reflections and Shapiro Steps in InAs Nanosheet Josephson Junctions
• A double quantum dot defined by top gates in a single crystalline InSb nanosheet
• Superconducting Quantum Interference Devices based on InSb nanoflag Josephson junctions
• Impact of invasive metal probes on Hall measurements in semiconductor nanostructures
• Measurements of spin-orbit interaction in epitaxially grown InAs nanosheets
• Tunable superconducting diode effect in higher-harmonic InSb nanosheet interferometers
• Post-growth shaping and transport anisotropy in 2D InAs nanofins
• Quantum oscillations in a hexagonal boron nitride-supported single crystalline InSb nanosheet
• Fabrication and characterization of InSb nanosheet/hBN/graphite heterostructure devices
• Ubiquitous missing first Shapiro step in Al-InSb nanosheet Josephson junctions
• Gate-controlled Supercurrent in Ballistic InSb Nanoflag Josephson Junctions
• Spin splitting, Kondo correlation and singlet-doublet quantum phase transition in a superconductor-coupled InSb nanosheet quantum dot