27 citations · 35 across the 3 of their papers we have counts for
3 papers
cond-mat.mes-hall2022★ 4 cited
Fabrication and characterization of InSb nanosheet/hBN/graphite heterostructure devices
Li Zhang, Yuanjie Chen, Dong Pan +3
Semiconductor InSb nanosheet/hexagonal boron nitride (hBN)/graphite trilayers are fabricated, and single- and double-gate devices made from the trilayers are realized and character…
cond-mat.mes-hall2022★ 4 cited
Quantum oscillations in a hexagonal boron nitride-supported single crystalline InSb nanosheet
Li Zhang, Dong Pan, Yuanjie Chen +2
A gated Hall-bar device is made from an epitaxially grown, free-standing InSb nanosheet on a hexagonal boron nitride (hBN) dielectric/graphite gate structure and the electron trans…
cond-mat.mes-hall2020★ 27 cited
Strong and tunable spin-orbit interaction in a single crystalline InSb nanosheet
Yuanjie Chen, Shaoyun Huang, Dong Pan +4
A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin-orbit interaction in a narrow bandgap…