activity
20152022
most citedTwo-dimensional Mott variable-range hopping transport in a disordered MoS nanoflake

69 citations · 426 across the 18 of their papers we have counts for

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Showing 2018Show all

5 papers · 1 filter

cond-mat.mtrl-sci2018★ 35 cited

Dimension Engineering of Narrow Bandgap Semiconductor InAs Nanostructures in Wafer-Scale

Dong Pan, Ji-Yin Wang, Wei Zhang +7

Here, we demonstrate an approach that provides a precise control of the dimension of InAs from one-dimensional nanowires to wafer-scale free-standing two-dimensional nanosheets, wh…

cond-mat.mes-hall2018★ 17 cited

Gate defined quantum dot realized in a single crystalline InSb nanosheet

Jianhong Xue, Yuanjie Chen, Dong Pan +4

Single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics and topological qua…

cond-mat.mes-hall2018★ 32 cited

Anisotropic Pauli spin-blockade effect and spin-orbit interaction field in an InAs nanowire double quantum dot

Ji-Yin Wang, Guang-Yao Huang, Shaoyun Huang +4

We report on experimental detection of the spin-orbit interaction field in an InAs nanowire double quantum dot device. In the spin blockade regime, leakage current through the doub…

cond-mat.mes-hall2018★ 69 cited

Two-dimensional Mott variable-range hopping transport in a disordered MoS nanoflake

Jianhong Xue, Shaoyun Huang, Ji-Yin Wang +1

The transport characteristics of a disordered MoS nanoflake in the insulator regime are studied by electrical and magnetotransport measurements. The layered MoS nanoflake i…

cond-mat.mes-hall2018★ 64 cited

Strong spin-orbit interaction and magnetotransport in semiconductor BiOSe nanoplates

Mengmeng Meng, Shaoyun Huang, Congwei Tan +4

Semiconductor BiOSe nanolayers of high crystal quality have been realized via epitaxial growth. These two-dimensional (2D) materials possess excellent electron transport pr…