Anomalous Temperature Dependence of Quantum Correction to the Conductivity of Magnetic Topological Insulators
arXiv:1911.08230 · doi:10.1103/PhysRevLett.124.206603
Abstract
Quantum transport in magnetic topological insulators reveals the strong interplay between the magnetism and topology of electronic band structures. A recent experiment on magnetically doped topological insulator Bi2Se3 thin films showed the anomalous temperature dependence of the magnetoconductivity while their field dependence presents a clear signature of weak anti-localization [Tkac et al., Phys. Rev. Lett. 123, 036406(2019)]. Here we demonstrate that the tiny mass of the surface electrons induced by the bulk magnetization leads to a temperature-dependent correction to the πBerry phase, and generates a decoherence mechanism to the phase coherence length of the surface electrons. As a consequence, the quantum correction to the conductivity can exhibit non-monotonic behavior by decreasing the temperature. This effect is attributed to the close relation of the Berry phase and quantum interference of the topological surface electrons in quantum topological materials.
arXiv comment6 pages, 4 figures, 1 table
References in corpus (32)
- Topological Insulators
- Topological insulators and superconductors
- Anomalous Hall effect
- Topological Insulator Materials
- Crossover of Three-Dimensional Topological Insulator of Bi2Se3 to the Two-Dimensional Limit
- Weak localisation magnetoresistance and valley symmetry in graphene
- Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide
- Massive Dirac fermions and spin physics in an ultrathin film of topological insulator
- Magnetic impurities on the surface of a topological insulator
- Impurity effect on weak anti-localization in the topological insulator Bi2Te3
- The development of ferromagnetism in the doped topological insulator Bi2-xMnxTe3
- Effective continuous model for surface states and thin films of three dimensional topological insulators
- Quantum interference in macroscopic crystals of non-metallic BiSe
- Crossover between weak localization and weak antilocalization in magnetically doped topological insulator
- Electrically tunable surface-to-bulk coherent coupling in topological insulator thin films
- Competition between weak localization and antilocalization in topological surface states
- Thickness-dependent bulk properties and weak anti-localization effect in topological insulator Bi2Se3
- Evidence for electron-electron interaction in topological insulator thin films
- Electron interaction-driven insulating ground state in Bi2Se3 topological insulators in the two dimensional limit
- Tunable Surface Conductivity in Bi2Se3 Revealed in Diffusive Electron Transport
- Weak localization of bulk channels in topological insulator thin film
- Weak Localization and Antilocalization in Topological Insulator Thin Films with Coherent Bulk-Surface Coupling
- Transport in two-dimensional topological materials: recent developments in experiment and theory
- Finite-temperature conductivity and magnetoconductivity of topological insulators
- Two-dimensional universal conductance fluctuations and the electron-phonon interaction of topological surface states in Bi2Te2Se nanoribbons
- Weak localization and weak anti-localization in topological insulators
- Weak antilocalization and electron-electron interaction in coupled multiple-channel transport in a BiSe thin film
- Tunable interaction-induced localization of surface electrons in antidot nanostructured Bi2Te3 thin films
- Quantum Interference Theory of Magnetoresistance in Dirac Materials
- Influence of an anomalous temperature-dependence of the phase coherence length on the conductivity of magnetic topological insulators
- Interference-induced magnetoresistance in HgTe quantum wells
- Transport in topological insulators with bulk-surface coupling: Interference corrections and conductance fluctuations
Cited by in corpus (3)
- Signatures of dephasing by mirror-symmetry breaking in weak-antilocalization magnetoresistance across the topological transition in PbSnSe
- Effects of disorder on the quantum transport properties in topologically nontrivial metal PbTaSe
- Linear magnetoresistance of two-dimensional massless Dirac fermions in the quantum limit