Ballistic PbTe Nanowire Devices

Abstract

Disorder is the primary obstacle in current Majorana nanowire experiments. Reducing disorder or achieving ballistic transport is thus of paramount importance. In clean and ballistic nanowire devices, quantized conductance is expected with plateau quality serving as a benchmark for disorder assessment. Here, we introduce ballistic PbTe nanowire devices grown using the selective-area-growth (SAG) technique. Quantized conductance plateaus in units of $2e^2/h$ are observed at zero magnetic field. This observation represents an advancement in diminishing disorder within SAG nanowires, as none of the previously studied SAG nanowires (InSb or InAs) exhibit zero-field ballistic transport. Notably, the plateau values indicate that the ubiquitous valley degeneracy in PbTe is lifted in nanowire devices. This degeneracy lifting addresses an additional concern in the pursuit of Majorana realization. Moreover, these ballistic PbTe nanowires may enable the search for clean signatures of the spin-orbit helical gap in future devices.

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Cited by in corpus (13)

• Selective-Area-Grown PbTe-Pb Planar Josephson Junctions for Quantum Devices
• Hard superconducting gap in PbTe nanowires
• Evidence for $\pi$-shifted Cooper quartets and few-mode transport in PbTe nanowire three-terminal Josephson junctions
• Gate-tunable subband degeneracy in semiconductor nanowires
• SQUID oscillations in PbTe nanowire networks
• Reducing disorder in PbTe nanowires for Majorana research
• Quantized Andreev conductance in semiconductor nanowires
• Anisotropy of PbTe nanowires with and without a superconductor
• Theory for electron and hole fine structure and Landé g-factors in lead chalcogenide nanowires
• Enhanced superconductivity in PbTe-In hybrids
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• Ballistic transport in 1D Rashba systems in the context of Majorana nanowires
• Presence versus absence of charging energies in PbTe quantum dots