Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(110) surfaces
arXiv:1808.04563 · doi:10.1103/PhysRevMaterials.3.084606
Abstract
We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1-D) channels using patterned SiO-coated InP(001), InP(111)B, and InP(110) substrates to establish a scalable platform for topological superconductor networks. Top-view scanning electron micrographs show excellent surface selectivity and dependence of major facet planes on the substrate orientations and ridge directions, and the ratios of the surface energies of the major facet planes were estimated. Detailed structural properties and defects in the InAs nanowires (NWs) were characterized by transmission electron microscopic analysis of cross-sections perpendicular to the NW ridge direction and along the NW ridge direction. Electrical transport properties of the InAs NWs were investigated using Hall bars, a field effect mobility device, a quantum dot, and an Aharonov-Bohm loop device, which reflect the strong spin-orbit interaction and phase-coherent transport characteristic in the selectively grown InAs systems. This study demonstrates that selective-area chemical beam epitaxy is a scalable approach to realize semiconductor 1-D channel networks with the excellent surface selectivity and this material system is suitable for quantum transport studies.
References in corpus (18)
- Signatures of Majorana fermions in hybrid superconductor-semiconductor nanowire devices
- Majorana Fermions and a Topological Phase Transition in Semiconductor-Superconductor Heterostructures
- Helical liquids and Majorana bound states in quantum wires
- Evidence of Majorana fermions in an Al - InAs nanowire topological superconductor
- Observation of Majorana Fermions in a Nb-InSb Nanowire-Nb Hybrid Quantum Device
- Superconductor-Nanowire Devices from Tunneling to the Multichannel Regime: Zero-Bias Oscillations and Magnetoconductance Crossover
- Scalable Designs for Quasiparticle-Poisoning-Protected Topological Quantum Computation with Majorana Zero Modes
- Quantized Majorana conductance
- Zeeman energy and spin relaxation in a one-electron quantum dot
- Epitaxy of Advanced Nanowire Quantum Devices
- The influence of surface stress on the equilibrium shape of strained quantum dots
- Braiding without Braiding: Teleportation-Based Quantum Information Processing with Majorana Zero Modes
- Template-assisted scalable nanowire networks
- Selective Area Grown Semiconductor-Superconductor Hybrids: A Basis for Topological Networks
- Giant fluctuations and gate control of the g-factor in InAs Nanowire Quantum Dots
- Field effect enhancement in buffered quantum nanowire networks
- Magnetotransport properties of individual InAs nanowires
- Interaction-induced dephasing of Aharonov-Bohm oscillations
Cited by in corpus (24)
- Estimating disorder and its adverse effects in semiconductor Majorana nanowires
- Conductance-matrix symmetries of a three-terminal hybrid device
- Charge impurity effects in hybrid Majorana nanowires
- Closing of the Induced Gap in a Hybrid Superconductor-Semiconductor Nanowire
- In-plane selective area InSb-Al nanowire quantum networks
- End-to-end correlated subgap states in hybrid nanowires
- Selective area epitaxy of PbTe-Pb hybrid nanowires on a lattice-matched substrate
- In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices
- Observation of nonlocal Josephson effect on double InAs nanowires
- Wurtzite InP Microdisks: from Epitaxy to Room-Temperature Lasing
- Ballistic PbTe Nanowire Devices
- Observation of Aharonov-Bohm effect in PbTe nanowire networks
- Experimental review on Majorana zero-modes in hybrid nanowires
- Selective Area Growth Rates of III-V Nanowires
- Selective area epitaxy of GaAs films using patterned graphene on Ge
- Cryogenic Multiplexing with Bottom-Up Nanowires
- SQUID oscillations in PbTe nanowire networks
- Reducing disorder in PbTe nanowires for Majorana research
- Post-growth shaping and transport anisotropy in 2D InAs nanofins
- Semiconductor Epitaxy in Superconducting Templates
- Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices
- Spin-orbit Energies in Etch-Confined Superconductor-Semiconductor Nanowires
- Few-Mode and Anisotropic Quantum Transport in InSb Nanoribbons Using an All-van der Waals Material-Based Gate
- Realizing Majorana Kramers pairs in two-channel InAs-Al nanowires with highly misaligned electric fields