70 citations · 142 across the 8 of their papers we have counts for
9 papers
Doping profile engineered triple heterojunction TFETs with 12 nm body thickness
Chin-Yi Chen, Hsin-Ying Tseng, Hesameddin Ilatikhameneh +4
Triple heterojunction (THJ) TFETs have been proposed to resolve the low ON-current challenge of TFETs. However, the design space for THJ-TFETs is limited by fabrication challenges…
A design framework for all-digital mmWave massive MIMO with per-antenna nonlinearities
Mohammed Abdelghany, Ali A. Farid, Upamanyu Madhow +1
Millimeter wave MIMO combines the benefits of compact antenna arrays with a large number of elements and massive bandwidths, so that fully digital beamforming has the potential of…
Phase noise in modular millimeter wave massive MIMO
Maryam Eslami Rasekh, Mohammed Abdelghany, Upamanyu Madhow +1
This paper investigates the effect of oscillator phase noise on a multiuser millimeter wave (mmWave) massive MIMO uplink as we scale up the number of base station antennas, fixing…
Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(110) surfaces
Joon Sue Lee, Sukgeun Choi, Mihir Pendharkar +15
We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1-D) channels using patterned SiO-coated InP(001), InP(111)B, and InP(110) s…
A Multiscale Modeling of Triple-Heterojunction Tunneling FETs
Jun Z. Huang, Pengyu Long, Michael Povolotskyi +5
A high performance triple-heterojunction (3HJ) design has been previously proposed for tunneling FETs (TFETs). Compared with single heterojunction (HJ) TFETs, the 3HJ TFETs have bo…
Performance degradation of superlattice MOSFETs due to scattering in the contacts
Pengyu Long, Jun Huang, Zhengping Jiang +3
Ideal, completely coherent quantum transport calculations had predicted that superlattice MOSFETs may offer steep subthreshold swing performance below 60mV/dec to around 39mV/dec.…
Scalable GaSb/InAs tunnel FETs with non-uniform body thickness
Jun Z. Huang, Pengyu Long, Michael Povolotskyi +2
GaSb/InAs heterojunction tunnel field-effect transistors are strong candidates in building future low-power integrated circuits, as they could provide both steep subthreshold swing…
P-Type Tunnel FETs With Triple Heterojunctions
Jun Z. Huang, Pengyu Long, Michael Povolotskyi +2
A triple-heterojunction (3HJ) design is employed to improve p-type InAs/GaSb heterojunction (HJ) tunnel FETs. The added two HJs (AlInAsSb/InAs in the source and GaSb/AlSb in the ch…
Control of InGaAs facets using metal modulation epitaxy (MME)
Mark A. Wistey, Ashish K. Baraskar, Uttam Singisetti +6
Control of faceting during epitaxy is critical for nanoscale devices. This work identifies the origins of gaps and different facets during regrowth of InGaAs adjacent to patterned…