P-Type Tunnel FETs With Triple Heterojunctions

Abstract

A triple-heterojunction (3HJ) design is employed to improve p-type InAs/GaSb heterojunction (HJ) tunnel FETs. The added two HJs (AlInAsSb/InAs in the source and GaSb/AlSb in the channel) significantly shorten the tunnel distance and create two resonant states, greatly improving the ON state tunneling probability. Moreover, the source Fermi degeneracy is reduced by the increased source (AlInAsSb) density of states and the OFF state leakage is reduced by the heavier channel (AlSb) hole effective masses. Quantum ballistic transport simulations show, that with V_{DD} = 0.3V and I_{OFF} = 10^{-3}A/m, I_{ON} of 582A=m (488A=m) is obtained at 30nm (15nm) channel length, which is comparable to n-type 3HJ counterpart and significantly exceeding p-type silicon MOSFET. Simultaneously, the nonlinear turn on and delayed saturation in the output characteristics are also greatly improved.

References in corpus (3)

• Heterojunction Vertical Band-to-Band Tunneling Transistors for Steep Subthreshold Swing and High ON Current
• Tight binding analysis of Si and GaAs ultra thin bodies with subatomic resolution
• Quantum Transport Simulation of III-V TFETs with Reduced-Order K.P Method

Cited by in corpus (4)

• Impact of body thickness and scattering on III-V triple heterojunction Fin-TFET modeled with atomistic mode space approximation
• A Multiscale Modeling of Triple-Heterojunction Tunneling FETs
• Modeling tunnel field effect transistors - from interface chemistry to non-idealities to circuit level performance
• Doping profile engineered triple heterojunction TFETs with 12 nm body thickness