2 papers
physics.app-ph2020
Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique
Anthony McFadden, Aranya Goswami, Michael Seas +4
Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/A…
cond-mat.mes-hall2018
Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(110) surfaces
Joon Sue Lee, Sukgeun Choi, Mihir Pendharkar +15
We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1-D) channels using patterned SiO-coated InP(001), InP(111)B, and InP(110) s…