activity
20032008
most citedElectrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface

188 citations · 263 across the 3 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci200854 cited

Bias-controlled sensitivity of ferromagnet/semiconductor electrical spin detectors

S. A. Crooker, E. Garlid, A. N. Chantis +6

Using Fe/GaAs Schottky tunnel barriers as electrical spin detectors, we show that the magnitude and sign of their spin-detection sensitivities can be widely tuned with the voltage…

cond-mat.mtrl-sci200621 cited

Optical and electrical spin injection and spin transport in hybrid Fe/GaAs devices

S. A. Crooker, M. Furis, X. Lou +4

We discuss methods for imaging the nonequilibrium spin polarization of electrons in Fe/GaAs spin transport devices. Both optically- and electrically-injected spin distributions are…

cond-mat.mtrl-sci2006188 cited

Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface

X. Lou, C. Adelmann, M. Furis +3

We show that the accumulation of spin-polarized electrons at a forward-biased Schottky tunnel barrier between Fe and n-GaAs can be detected electrically. The spin accumulation lead…

cond-mat.mtrl-sci2005

Exchange Biasing of the Ferromagnetic Semiconductor (Ga,Mn)As by MnO

K. F. Eid, M. B. Stone, O. Maksimov +6

We provide an overview of progress on the exchange biasing of a ferromagnetic semiconductor (Ga1-xMnxAs) by proximity to an antiferromagnetic oxide layer (MnO). We present a detail…

cond-mat.mtrl-sci2003

Exchange Biasing of the Ferromagnetic Semiconductor Ga1-xMnxAs

K. F. Eid, M. B. Stone, K. C. Ku +4

We demonstrate the exchange coupling of a ferromagnetic semiconductor (Ga1-xMnxAs) with an overgrown antiferromagnet (MnO). Unlike most conventional exchange biased systems, the bl…

cond-mat2003

Nuclear Magnetic Resonance in a Ferromagnet-Semiconductor Heterostructure

J. Strand, B. D. Schultz, A. F. Isakovic +3

We report the observation of nuclear magnetic resonance (NMR) in a ferromagnet-semiconductor heterostructure in the presence of a spin-polarized current. Spin-polarized electrons i…