152 citations · 237 across the 25 of their papers we have counts for
27 papers
Digital Etching of Single-Crystalline Silicon Fin Barriers Down to Sub-10 nm
Yu Wu, Teun A. J. van Schijndel, Anthony P. McFadden +3
This work presents a fabrication process to realize sub-10 nm-thick, high-aspect-ratio Si fins using high-resistivity float-zone single-crystal Si wafers. Following anisotropic wet…
Understanding the superconducting proximity effect in semiconductors through quantum oscillations
Milo Coombs, Teun A. J. van Schijndel, Yu Wu +5
Superconductor-semiconductor hybrids host emergent states of matter and offer a platform for new qubits, but the superconducting metal shunts electrical transport, which rules out…
Hole concentrations in doped gray α-Sn on InSb and CdTe measured with infrared ellipsometry
Jaden R. Love, Carlos A. Armenta, Atlantis K. Moses +5
Gray tin (α-Sn) layers with 30 nm thickness were grown on InSb (001) substrates using molecular beam epitaxy. The surface preparation of the substrates was adjusted to achieve eith…
Tunable anharmonicity in Sn-InAs nanowire transmons beyond the short junction limit
Amrita Purkayastha, Amritesh Sharma, Param J. Patel +11
The anharmonicity of a transmon qubit, defined as the difference in energy level spacing, is a key design parameter. In transmons built from hybrid superconductor-semiconductor Jos…
Combining Quasiparticle Self-Consistent and Machine-Learned DFT+ to Assess Half-Metallicity in Co- and Ni-Based Heuslers
Zefeng Cai, Malcolm J. A. Jardine, Maituo Yu +6
Half-metallic Heusler compounds are of significant interest for spintronics. For device fabrication, compounds that can be epitaxially grown on III-V semiconductors are particularl…
Cryogenic growth of aluminum: structural morphology, optical properties, superconductivity and microwave dielectric loss
Wilson J. Yánez-Parreño, Teun A. J. van Schijndel, Anthony P. McFadden +7
We explore the molecular beam epitaxy synthesis of superconducting aluminum thin films grown on c-plane sapphire substrates at cryogenic temperatures of 6 K and compare their behav…
Transmon qubit using Sn as a junction superconductor
Amrita Purkayastha, Amritesh Sharma, Param J. Patel +11
Superconductor qubits typically use aluminum-aluminum oxide tunnel junctions to provide the non-linear inductance. Junctions with semiconductor barriers make it possible to vary th…
Spin-orbit coupling in digital alloyed InGaAs quantum wells
Jason T. Dong, Yilmaz Gul, Irene Villar Rodriguez +5
Increasing the spin-orbit coupling in InGaAs quantum wells is desirable for applications involving spintronics and topological quantum computing. Digital alloying is an approach to…
Altermagnetic band splitting in 10 nm epitaxial CrSb thin films
Sandra Santhosh, Paul Corbae, Wilson J. Yanez-Parreno +14
Altermagnets are a newly identified family of collinear antiferromagnets with momentum-dependent spin-split band structure of non-relativistic origin, derived from spin-group symme…
Sn-InAs nanowire shadow-defined Josephson junctions
Amritesh Sharma, An-Hsi Chen, Connor P. Dempsey +6
Interest in hybrid electronic devices for quantum science is driving the research into superconductor-semiconductor materials combinations. Here we study InAs nanowires coated with…
Non-magnetic Fractional Conductance in High Mobility InAs Quantum Point Contacts
I. Villar Rodriguez, Y. Gul, C. P. Dempsey +4
In this letter, we report the magneto-electronic properties of high mobility InAs quantum point contacts grown on InP substrates. The 1D conductance reaches a maximum value of 17 p…
High-Q, size-independent, and reconfigurable optical antennas via zero-index material dispersion engineering
Prasad P. Iyer, Mihir Pendharkar, Anchal Agrawal +8
Enhancing light-matter interactions at the nanoscale is foundational to nanophotonics, with epsilon near zero (ENZ) materials demonstrating significant potential.High-quality (Q) f…
Near-half-metallic state in the half Heusler PtMnSb film on a III-V substrate
Shinichi Nishihaya, Malcolm J. A. Jardine, Hadass S. Inbar +9
The interplay between half-metallic ferromagnetism and spin-orbit coupling within the inversion symmetry-broken structure of half Heuslers provides an ideal platform for various sp…
Hybridization gap approaching the two-dimensional limit of topological insulator BiSb
Paul Corbae, Aaron N. Engel, Jason T. Dong +5
Bismuth antimony alloys (BiSb) provide a tuneable materials platform to study topological transport and spin-polarized surface states resulting from the nontrivial bulk…
Effects of Strain Compensation on Electron Mobilities in InAs Quantum Wells Grown on InP(001)
C. P. Dempsey, J. T. Dong, I. Villar Rodriguez +6
InAs quantum wells (QWs) grown on InP substrates are interesting for their applications in devices with high spin-orbit coupling (SOC) and their potential role in creating topologi…
Cryogenic growth of tantalum thin films for low-loss superconducting circuits
Teun A. J. van Schijndel, Anthony P. McFadden, Aaron N. Engel +5
Motivated by recent advancements highlighting Ta as a promising material in low-loss superconducting circuits and showing long coherence times in superconducting qubits, we have ex…
Enhanced mobility of ternary InGaAs quantum wells through digital alloying
Jason T. Dong, Yilmaz Gul, Aaron N. Engel +4
High In content InGaAs quantum wells (In 75%) are potentially useful for topological quantum computing and spintronics applications. In high mobility InGaAs quantum wells, a…
First-principles studies of Schottky barriers and tunneling properties at Al(111)/Si(111) and CoSi(111)/Si(111) interfaces
J. K. Nangoi, C. J. Palmstrøm, C. G. Van de Walle
We present first-principles calculations of Schottky barrier heights (SBHs) at interfaces relevant for silicon-based merged-element transmon qubit devices. Focusing on Al(111)/Si(1…
Determining the bulk and surface electronic structure of -Sn/InSb(001) with spin- and angle-resolved photoemission spectroscopy
Aaron N. Engel, Paul J. Corbae, Hadass S. Inbar +9
The surface and bulk states in topological materials have shown promise in many applications. Grey or -Sn, the inversion symmetric analogue to HgTe, can exhibit a variety of the…
Strain Solitons in an Epitaxially Strained van der Waals-like Material
Jason T. Dong, Hadass S. Inbar, Connor P. Dempsey +2
Strain solitons are quasi-dislocations that form in van der Waals materials to relieve the energy associated with lattice or rotational mismatch in the crystal. Novel and unusual e…
Growth and characterization of -Sn thin films on In- and Sb-rich reconstructions of InSb(001)
Aaron N. Engel, Connor P. Dempsey, Hadass S. Inbar +7
-Sn thin films can exhibit a variety of topologically non-trivial phases. Both studying the transitions between these phases and making use of these phases in eventual applicati…
Role of a capping layer on the crystalline structure of Sn thin films grown at cryogenic temperatures on InSb substrates
A. -H. Chen, C. P. Dempsey, M. Pendharkar +8
Metal deposition with cryogenic cooling is widely utilized in the condensed matter community for producing ultra-thin epitaxial superconducting layers on semiconductors. However, a…
Evidence of 0-Josephson junction from skewed diffraction patterns in Sn-InSb nanowires
B. Zhang, Z. Li, V. Aguilar +10
We study Josephson junctions based on InSb nanowires with Sn shells. We observe skewed critical current diffraction patterns: the maxima in forward and reverse current bias are at…
Planar Josephson Junctions Templated by Nanowire Shadowing
P. Zhang, A. Zarassi, M. Pendharkar +16
More and more materials, with a growing variety of properties, are built into electronic devices. This is motivated both by increased device performance and by the studies of mater…