152 citations · 237 across the 25 of their papers we have counts for
8 papers · 1 filter
Near-half-metallic state in the half Heusler PtMnSb film on a III-V substrate
Shinichi Nishihaya, Malcolm J. A. Jardine, Hadass S. Inbar +9
The interplay between half-metallic ferromagnetism and spin-orbit coupling within the inversion symmetry-broken structure of half Heuslers provides an ideal platform for various sp…
Hybridization gap approaching the two-dimensional limit of topological insulator BiSb
Paul Corbae, Aaron N. Engel, Jason T. Dong +5
Bismuth antimony alloys (BiSb) provide a tuneable materials platform to study topological transport and spin-polarized surface states resulting from the nontrivial bulk…
Effects of Strain Compensation on Electron Mobilities in InAs Quantum Wells Grown on InP(001)
C. P. Dempsey, J. T. Dong, I. Villar Rodriguez +6
InAs quantum wells (QWs) grown on InP substrates are interesting for their applications in devices with high spin-orbit coupling (SOC) and their potential role in creating topologi…
Cryogenic growth of tantalum thin films for low-loss superconducting circuits
Teun A. J. van Schijndel, Anthony P. McFadden, Aaron N. Engel +5
Motivated by recent advancements highlighting Ta as a promising material in low-loss superconducting circuits and showing long coherence times in superconducting qubits, we have ex…
Enhanced mobility of ternary InGaAs quantum wells through digital alloying
Jason T. Dong, Yilmaz Gul, Aaron N. Engel +4
High In content InGaAs quantum wells (In 75%) are potentially useful for topological quantum computing and spintronics applications. In high mobility InGaAs quantum wells, a…
First-principles studies of Schottky barriers and tunneling properties at Al(111)/Si(111) and CoSi(111)/Si(111) interfaces
J. K. Nangoi, C. J. Palmstrøm, C. G. Van de Walle
We present first-principles calculations of Schottky barrier heights (SBHs) at interfaces relevant for silicon-based merged-element transmon qubit devices. Focusing on Al(111)/Si(1…
Determining the bulk and surface electronic structure of -Sn/InSb(001) with spin- and angle-resolved photoemission spectroscopy
Aaron N. Engel, Paul J. Corbae, Hadass S. Inbar +9
The surface and bulk states in topological materials have shown promise in many applications. Grey or -Sn, the inversion symmetric analogue to HgTe, can exhibit a variety of the…
Strain Solitons in an Epitaxially Strained van der Waals-like Material
Jason T. Dong, Hadass S. Inbar, Connor P. Dempsey +2
Strain solitons are quasi-dislocations that form in van der Waals materials to relieve the energy associated with lattice or rotational mismatch in the crystal. Novel and unusual e…