152 citations · 237 across the 25 of their papers we have counts for
10 papers · 1 filter
Tunable anharmonicity in Sn-InAs nanowire transmons beyond the short junction limit
Amrita Purkayastha, Amritesh Sharma, Param J. Patel +11
The anharmonicity of a transmon qubit, defined as the difference in energy level spacing, is a key design parameter. In transmons built from hybrid superconductor-semiconductor Jos…
Transmon qubit using Sn as a junction superconductor
Amrita Purkayastha, Amritesh Sharma, Param J. Patel +11
Superconductor qubits typically use aluminum-aluminum oxide tunnel junctions to provide the non-linear inductance. Junctions with semiconductor barriers make it possible to vary th…
Spin-orbit coupling in digital alloyed InGaAs quantum wells
Jason T. Dong, Yilmaz Gul, Irene Villar Rodriguez +5
Increasing the spin-orbit coupling in InGaAs quantum wells is desirable for applications involving spintronics and topological quantum computing. Digital alloying is an approach to…
Non-magnetic Fractional Conductance in High Mobility InAs Quantum Point Contacts
I. Villar Rodriguez, Y. Gul, C. P. Dempsey +4
In this letter, we report the magneto-electronic properties of high mobility InAs quantum point contacts grown on InP substrates. The 1D conductance reaches a maximum value of 17 p…
Effects of Strain Compensation on Electron Mobilities in InAs Quantum Wells Grown on InP(001)
C. P. Dempsey, J. T. Dong, I. Villar Rodriguez +6
InAs quantum wells (QWs) grown on InP substrates are interesting for their applications in devices with high spin-orbit coupling (SOC) and their potential role in creating topologi…
Enhanced mobility of ternary InGaAs quantum wells through digital alloying
Jason T. Dong, Yilmaz Gul, Aaron N. Engel +4
High In content InGaAs quantum wells (In 75%) are potentially useful for topological quantum computing and spintronics applications. In high mobility InGaAs quantum wells, a…
Evidence of 0-Josephson junction from skewed diffraction patterns in Sn-InSb nanowires
B. Zhang, Z. Li, V. Aguilar +10
We study Josephson junctions based on InSb nanowires with Sn shells. We observe skewed critical current diffraction patterns: the maxima in forward and reverse current bias are at…
Planar Josephson Junctions Templated by Nanowire Shadowing
P. Zhang, A. Zarassi, M. Pendharkar +16
More and more materials, with a growing variety of properties, are built into electronic devices. This is motivated both by increased device performance and by the studies of mater…
Gate-tunable Superconducting Diode Effect in a Three-terminal Josephson Device
Mohit Gupta, Gino V. Graziano, Mihir Pendharkar +4
The phenomenon of non-reciprocal critical current in a Josephson device, termed the Josephson diode effect, has garnered much recent interest. Realization of the diode effect requi…
Mirage Andreev spectra generated by mesoscopic leads in nanowire quantum dots
Z. Su, A. Zarassi, J. -F. Hsu +15
We study transport mediated by Andreev bound states formed in InSb nanowire quantum dots. Two kinds of superconducting source and drain contacts are used: epitaxial Al/InSb devices…